Here at the Emerging Photonic and Electronic Materials Lab, we focus on the synthesis of inorganic materials and the study of the basic material properties. Our goal is to understand the electrical, optical, and structural properties of materials better and figure out ways to improve the performance of a device of interest.

Currently, we are studying GaN, Ga₂O₃, and SnO₂ for various applications including but not limited to solid-state electronic devices and energy storage devices. A long-term objective of the lab is to explore new materials for energy-efficient electronics and devise new ways to make them.

In our lab, we focus on understanding the basic properties of Ga₂O₃ to enhance the device performance of power electronics beyond what is achievable today. We are particularly interested in:

• Understanding the impacts of point defects such as vacancies on the electrical property
• Understanding the electrical properties of oxygen-substitutional dopants
• Controlled CVD growth of other Ga₂O₃ phases such as kappa-Ga₂O₃ for high electron mobility transistors

We are also exploring other oxides including Al₂O₃ and SnO_2-x for various applications such as a thin film transistor. We are particularly interested in the development of SnO₂-based field-effect transistors compatible with Si CMOS technology.